SIHP12N50E-BE3

SIHP12N50E-BE3

SIHP12N50E-BE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V

sihp12n50e.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.97 EUR
10+ 4.46 EUR
100+ 3.58 EUR
500+ 2.94 EUR
1000+ 2.52 EUR

Technische Details SIHP12N50E-BE3

Description: N-CHANNEL 500V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 114W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 500 V.

Preis SIHP12N50E-BE3 ab 2.52 EUR bis 9.78 EUR

SIHP12N50E-BE3
SIHP12N50E-BE3
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 500V
sihp12n50e-1768938.pdf
auf Bestellung 1792 Stücke
Lieferzeit 14-28 Tag (e)
6+ 9.78 EUR
100+ 9.59 EUR
250+ 9.41 EUR
500+ 7.12 EUR
SIHP12N50E-BE3
SIHP12N50E-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 500 V
sihp12n50e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP12N50E-BE3
SIHP12N50E-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Cut Tape (CT)
sihp12n50e.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen