SIHP14N50D-E3

SIHP14N50D-E3

SIHP14N50D-E3

Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs TO-220AB
sihp14n50d-1768809.pdf
verfügbar/auf Bestellung
auf Bestellung 966 Stücke
Lieferzeit 14-28 Tag (e)

7+ 7.59 EUR
10+ 6.84 EUR
25+ 6.66 EUR
100+ 5.51 EUR

Technische Details SIHP14N50D-E3

Description: MOSFET N-CH 500V 14A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

Preis SIHP14N50D-E3 ab 5.51 EUR bis 7.59 EUR

SIHP14N50D-E3
SIHP14N50D-E3
Hersteller: Vishay
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB
sihp14n50d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP14N50D-E3
SIHP14N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
sihp14n50d.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen