auf Bestellung 796 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.84 EUR |
| 10+ | 5.69 EUR |
| 100+ | 4.55 EUR |
| 250+ | 4.19 EUR |
| 500+ | 3.8 EUR |
| 1000+ | 3.25 EUR |
| 2000+ | 3.07 EUR |
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Technische Details SIHP14N50D-E3 Vishay / Siliconix
Description: MOSFET N-CH 500V 14A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V.
Weitere Produktangebote SIHP14N50D-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIHP14N50D-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SIHP14N50D-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 14A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1144 pF @ 100 V |
Produkt ist nicht verfügbar |