SIHP14N60E-BE3

SIHP14N60E-BE3

SIHP14N60E-BE3

Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3

sihp14n60e.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.32 EUR
10+ 5.67 EUR
100+ 4.56 EUR
500+ 3.74 EUR
1000+ 3.21 EUR

Technische Details SIHP14N60E-BE3

Description: N-CHANNEL 600V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 147W (Tc), Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Packaging: Tube, Package / Case: TO-220-3.

Preis SIHP14N60E-BE3 ab 3.21 EUR bis 6.42 EUR

SIHP14N60E-BE3
SIHP14N60E-BE3
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 600V (D-S)
sihp14n60e-1768941.pdf
auf Bestellung 1989 Stücke
Lieferzeit 14-28 Tag (e)
9+ 6.42 EUR
10+ 5.8 EUR
25+ 5.46 EUR
100+ 4.65 EUR