Technische Details SIHP17N60D-GE3 Vishay
Description: MOSFET N-CH 600V 17A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V, Power Dissipation (Max): 277.8W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V.
Weitere Produktangebote SIHP17N60D-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHP17N60D-GE3 | Hersteller : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.7A Pulsed drain current: 48A Power dissipation: 277.8W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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SIHP17N60D-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 17A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 100 V |
Produkt ist nicht verfügbar |
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SIHP17N60D-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 600V Vds 30V Vgs TO-220AB |
Produkt ist nicht verfügbar |
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| SIHP17N60D-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.7A Pulsed drain current: 48A Power dissipation: 277.8W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |