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SIHP21N60EF-GE3

SIHP21N60EF-GE3 Vishay Semiconductors


sihp21n60ef.pdf Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 1975 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.49 EUR
50+ 7.51 EUR
100+ 6.45 EUR
500+ 5.72 EUR
1000+ 5.25 EUR
2500+ 4.99 EUR
Mindestbestellmenge: 6
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Technische Details SIHP21N60EF-GE3 Vishay Semiconductors

Description: MOSFET N-CH 600V 21A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V.

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SIHP21N60EF-GE3 SIHP21N60EF-GE3 Hersteller : Vishay sihp21n60ef.pdf Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
SIHP21N60EF-GE3 SIHP21N60EF-GE3 Hersteller : Vishay sihp21n60ef.pdf Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
SIHP21N60EF-GE3 Hersteller : VISHAY sihp21n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHP21N60EF-GE3 SIHP21N60EF-GE3 Hersteller : Vishay Siliconix sihp21n60ef.pdf Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Produkt ist nicht verfügbar
SIHP21N60EF-GE3 Hersteller : VISHAY sihp21n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar