SIHP21N80AE-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 800V 17.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
auf Bestellung 976 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 9.93 EUR |
| 50+ | 7.87 EUR |
| 100+ | 6.75 EUR |
| 500+ | 6 EUR |
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Technische Details SIHP21N80AE-GE3 Vishay Siliconix
Description: MOSFET N-CH 800V 17.4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V.
Weitere Produktangebote SIHP21N80AE-GE3
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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SIHP21N80AE-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIHP21N80AE-GE3 - Leistungs-MOSFET, n-Kanal, 800 V, 17.4 A, 0.205 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 17.4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 32W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.205ohm |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP21N80AE-GE3 | Hersteller : Vishay |
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| SIHP21N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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SIHP21N80AE-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 850V Vds; 30V Vgs TO-220AB |
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| SIHP21N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
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