auf Bestellung 3992 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 13.94 EUR |
| 10+ | 11.7 EUR |
| 50+ | 11 EUR |
| 100+ | 9.44 EUR |
| 250+ | 8.92 EUR |
| 500+ | 8.4 EUR |
| 1000+ | 6.79 EUR |
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Technische Details SiHP30N60E-E3 Vishay / Siliconix
Description: MOSFET N-CH 600V 29A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V.
Weitere Produktangebote SiHP30N60E-E3
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Verfügbarkeit |
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SIHP30N60E-E3 | Hersteller : Vishay |
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SIHP30N60E-E3 | Hersteller : Vishay |
SIHP30N60E-E3 Vishay MOSFETs Transistor N-CH 600V 29A 3-Pin(3+Tab) TO-220AB - Arrow.com |
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SiHP30N60E-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 29A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V |
Produkt ist nicht verfügbar |