SIHP35N60E-GE3 Vishay Semiconductors
auf Bestellung 180 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 14.09 EUR |
10+ | 11.83 EUR |
25+ | 11.18 EUR |
100+ | 9.57 EUR |
250+ | 9.05 EUR |
500+ | 8.5 EUR |
1000+ | 7.51 EUR |
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Technische Details SIHP35N60E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 600V 32A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V.
Weitere Produktangebote SIHP35N60E-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIHP35N60E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 32A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SIHP35N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 80A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: THT Gate charge: 132nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHP35N60E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 32A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V |
Produkt ist nicht verfügbar |
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SIHP35N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 80A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: THT Gate charge: 132nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |