Produkte > VISHAY SILICONIX > SIHP35N60EF-GE3
SIHP35N60EF-GE3

SIHP35N60EF-GE3 Vishay Siliconix


sihp35n60ef.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
auf Bestellung 938 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.53 EUR
50+ 11.52 EUR
100+ 9.87 EUR
500+ 8.78 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details SIHP35N60EF-GE3 Vishay Siliconix

Description: MOSFET N-CH 600V 32A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V.

Weitere Produktangebote SIHP35N60EF-GE3 nach Preis ab 7.54 EUR bis 14.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIHP35N60EF-GE3 SIHP35N60EF-GE3 Hersteller : Vishay / Siliconix sihp35n60ef.pdf MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 1003 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.64 EUR
10+ 12.3 EUR
25+ 11.6 EUR
100+ 9.93 EUR
250+ 9.41 EUR
500+ 8.84 EUR
1000+ 7.54 EUR
Mindestbestellmenge: 4
SIHP35N60EF-GE3 SIHP35N60EF-GE3 Hersteller : Vishay sihp35n60ef.pdf Trans MOSFET N-CH 600V 32A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
SIHP35N60EF-GE3 Hersteller : VISHAY sihp35n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIHP35N60EF-GE3 Hersteller : VISHAY sihp35n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 80A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 134nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar