SIHP6N40D-GE3 Vishay Semiconductors
auf Bestellung 226 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
23+ | 2.35 EUR |
27+ | 1.93 EUR |
100+ | 1.52 EUR |
500+ | 1.39 EUR |
1000+ | 1.13 EUR |
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Technische Details SIHP6N40D-GE3 Vishay Semiconductors
Description: MOSFET N-CH 400V 6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V.
Weitere Produktangebote SIHP6N40D-GE3 nach Preis ab 1.15 EUR bis 2.63 EUR
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SIHP6N40D-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 400V 6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHP6N40D-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB |
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SIHP6N40D-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 4A; Idm: 13A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 4A Pulsed drain current: 13A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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SIHP6N40D-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 4A; Idm: 13A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 4A Pulsed drain current: 13A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |