Technische Details SIHS36N50D-E3 Vishay / Siliconix
Description: MOSFET N-CH 500V 36A SUPER-247, Packaging: Tube, Package / Case: TO-274AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SUPER-247™ (TO-274AA), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 100 V.
Weitere Produktangebote SIHS36N50D-E3 nach Preis ab 7.08 EUR bis 10.4 EUR
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| SIHS36N50D-E3 | Hersteller : VISHAY |
 SIHS36N50D-E3 THT N channel transistors |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHS36N50D-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 36A 3-Pin(3+Tab) Super-247 |
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SIHS36N50D-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 36A SUPER-247 Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 100 V |
Produkt ist nicht verfügbar |