SIHU3N50D-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 3A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Technische Details SIHU3N50D-E3 Vishay Siliconix
Description: MOSFET N-CH 500V 3A TO251AA, Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 69W (Tc), Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote SIHU3N50D-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIHU3N50D-E3 | Hersteller : Vishay / Siliconix |
MOSFETs 500V Vds 30V Vgs IPAK (TO-251) |
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