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SIHU3N50DA-GE3

SIHU3N50DA-GE3 Vishay / Siliconix


sihu3n50da.pdf Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs IPAK (TO-251)
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.13 EUR
28+ 1.87 EUR
100+ 1.28 EUR
500+ 1.07 EUR
1000+ 0.91 EUR
3000+ 0.81 EUR
24000+ 0.73 EUR
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Technische Details SIHU3N50DA-GE3 Vishay / Siliconix

Description: MOSFET N-CHANNEL 500V 3A IPAK, Packaging: Tube, Package / Case: TO-251-3 Long Leads, IPak, TO-251AB, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: IPAK (TO-251), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 100 V.

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SIHU3N50DA-GE3 Hersteller : Vishay Siliconix sihu3n50da.pdf Description: MOSFET N-CHANNEL 500V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 100 V
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