SIHU4N80E-GE3

SIHU4N80E-GE3

SIHU4N80E-GE3

Hersteller: Vishay Semiconductors
MOSFET 800V Vds 30V Vgs IPAK (TO-251)
sihu4n80e-1768984.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 187 Stücke
Lieferzeit 14-28 Tag (e)
10+ 5.33 EUR
11+ 4.81 EUR
25+ 4.55 EUR
100+ 3.87 EUR

Technische Details SIHU4N80E-GE3

Description: MOSFET N-CHAN 800V TO-251, Packaging: Tube, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 622pF @ 100V, Power Dissipation (Max): 69W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Supplier Device Package: IPAK (TO-251), Package / Case: TO-251-3 Long Leads, IPak, TO-251AB, Base Part Number: SIHU4.

Preis SIHU4N80E-GE3 ab 3.87 EUR bis 5.33 EUR

SIHU4N80E-GE3
SIHU4N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 800V TO-251
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 622pF @ 100V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Base Part Number: SIHU4
sihu4n80e.pdf
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