SIHU6N62E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 620V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.82 EUR |
| 75+ | 3.06 EUR |
| 150+ | 2.42 EUR |
| 525+ | 2.06 EUR |
| 1050+ | 1.67 EUR |
| 2025+ | 1.58 EUR |
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Technische Details SIHU6N62E-GE3 Vishay Siliconix
Description: MOSFET N-CH 620V 6A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK (TO-251), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V.
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SIHU6N62E-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 620V Vds 30V Vgs IPAK (TO-251) |
auf Bestellung 2990 Stücke: Lieferzeit 14-28 Tag (e) |
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| SIHU6N62E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 4A; Idm: 12A; 78W; IPAK,TO251 Mounting: THT Case: IPAK; TO251 Kind of package: tube Power dissipation: 78W Polarisation: unipolar Drain-source voltage: 620V Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 12A Type of transistor: N-MOSFET On-state resistance: 0.9Ω Drain current: 4A Anzahl je Verpackung: 1 Stücke |
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SIHU6N62E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 620V 6A 3-Pin(3+Tab) TO-251 |
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| SIHU6N62E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 4A; Idm: 12A; 78W; IPAK,TO251 Mounting: THT Case: IPAK; TO251 Kind of package: tube Power dissipation: 78W Polarisation: unipolar Drain-source voltage: 620V Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 12A Type of transistor: N-MOSFET On-state resistance: 0.9Ω Drain current: 4A |
Produkt ist nicht verfügbar |