SIHU6N80AE-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SIHU6N80AE-GE3
Description: MOSFET N-CH 800V 5A TO251AA, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Supplier Device Package: TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 62.5W (Tc), Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V, Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, Base Part Number: SIHU6, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Drain to Source Voltage (Vdss): 800V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix.
Preis SIHU6N80AE-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Semiconductors MOSFET N-CHANNEL 800V IPAK (TO-251) 
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auf Bestellung 6000 Stücke  Lieferzeit 14-28 Tag (e) |
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SIHU6N80AE-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 800V 5A TO251AA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIHU6N80AE-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 800V 5A TO251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 62.5W (Tc) Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Base Part Number: SIHU6 Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIHU6N80AE-GE3 Hersteller: Vishay Siliconix Description: MOSFET E SERIES IPAK TO-251 Base Part Number: SIHA6 Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 30W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHU6N80AE-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 800V 5A TO220 Base Part Number: SIHA6 Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 30W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V
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auf Bestellung 2990 Stücke Lieferzeit 21-28 Tag (e) |
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