SIHU6N80AE-GE3

SIHU6N80AE-GE3

Hersteller: Vishay
Power MOSFET
sihu6n80ae.pdf
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Technische Details SIHU6N80AE-GE3

Description: MOSFET N-CH 800V 5A TO251AA, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Supplier Device Package: TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 62.5W (Tc), Vgs (Max): ±30V, Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V, Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, Base Part Number: SIHU6, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Drain to Source Voltage (Vdss): 800V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix.

Preis SIHU6N80AE-GE3 ab 0 EUR bis 0 EUR

SIHU6N80AE-GE3
SIHU6N80AE-GE3
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 800V IPAK (TO-251)
sihu6n80ae-1769020.pdf
auf Bestellung 6000 Stücke
Lieferzeit 14-28 Tag (e)
SIHU6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO251AA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
sihu6n80ae.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHU6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Base Part Number: SIHU6
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
sihu6n80ae.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHU6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES IPAK TO-251
Base Part Number: SIHA6
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
siha6n80ae.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIHU6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO220
Base Part Number: SIHA6
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
siha6n80ae.pdf
auf Bestellung 2990 Stücke
Lieferzeit 21-28 Tag (e)