SIHU6N80AE-GE3 Vishay Semiconductors
auf Bestellung 5334 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.15 EUR |
| 10+ | 2.02 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.11 EUR |
| 6000+ | 0.94 EUR |
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Technische Details SIHU6N80AE-GE3 Vishay Semiconductors
Description: MOSFET N-CH 800V 5A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V.
Weitere Produktangebote SIHU6N80AE-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHU6N80AE-GE3 | Hersteller : Vishay |
 Power MOSFET |
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| SIHU6N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 62.5W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 22.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHU6N80AE-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 5A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SIHU6N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 62.5W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 22.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |