auf Bestellung 751 Stücke:
Lieferzeit 544-558 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 11.1 EUR |
| 10+ | 9.33 EUR |
| 30+ | 8.81 EUR |
| 120+ | 7.54 EUR |
| 270+ | 7.1 EUR |
| 510+ | 6.71 EUR |
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Technische Details SIHW21N80AE-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 17.4A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V.
Weitere Produktangebote SIHW21N80AE-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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SIHW21N80AE-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 800V 17.4A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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| SIHW21N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
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SIHW21N80AE-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 17.4A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SIHW21N80AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |