SIJ150DP-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4110 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 4110 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIJ150DP-T1-GE3
Description: MOSFET N-CH 45V 30.9A/110A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc), Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Preis SIJ150DP-T1-GE3 ab 2.2 EUR bis 3.2 EUR
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SIJ150DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 45V 30.9A/110A PPAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active 
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auf Bestellung 20 Stücke Lieferzeit 21-28 Tag (e) |
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SIJ150DP-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 45V 110A 5-Pin(4+Tab) PowerPAK SO T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIJ150DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 45V 30.9A/110A PPAK Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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