SIJ150DP-T1-GE3

SIJ150DP-T1-GE3

SIJ150DP-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 45-V (D-S) MOSFET N-CHANNEL PowerPAK
VISH_S_A0010924990_1-2571744.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4110 Stücke
Lieferzeit 14-28 Tag (e)
17+ 3.12 EUR
20+ 2.73 EUR
100+ 2.27 EUR
250+ 2.2 EUR

Technische Details SIJ150DP-T1-GE3

Description: MOSFET N-CH 45V 30.9A/110A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc), Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).

Preis SIJ150DP-T1-GE3 ab 2.2 EUR bis 3.2 EUR

SIJ150DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45V 30.9A/110A PPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
sij150dp.pdf
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
9+ 3.2 EUR
10+ 2.85 EUR
SIJ150DP-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 45V 110A 5-Pin(4+Tab) PowerPAK SO T/R
sij150dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIJ150DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45V 30.9A/110A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
sij150dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen