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SIJ438ADP-T1-GE3

SIJ438ADP-T1-GE3 Vishay Siliconix


sij438adp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 45.3A/169A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.3A (Ta), 169A(Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 20 V
auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.57 EUR
6000+ 1.5 EUR
9000+ 1.43 EUR
Mindestbestellmenge: 3000
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Technische Details SIJ438ADP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 45.3A/169A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45.3A (Ta), 169A(Tc), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 69.4W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 20 V.

Weitere Produktangebote SIJ438ADP-T1-GE3 nach Preis ab 1.67 EUR bis 3.8 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIJ438ADP-T1-GE3 SIJ438ADP-T1-GE3 Hersteller : Vishay Siliconix sij438adp.pdf Description: MOSFET N-CH 40V 45.3A/169A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.3A (Ta), 169A(Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 20 V
auf Bestellung 12772 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.8 EUR
10+ 3.11 EUR
100+ 2.42 EUR
500+ 2.05 EUR
1000+ 1.67 EUR
Mindestbestellmenge: 7
SIJ438ADP-T1-GE3 SIJ438ADP-T1-GE3 Hersteller : Vishay Semiconductors sij438adp.pdf MOSFET 40V Vds; 20/-16V Vgs PowerPAK SO-8L
auf Bestellung 5995 Stücke:
Lieferzeit 14-28 Tag (e)
SIJ438ADP-T1-GE3 Hersteller : Vishay sij438adp.pdf N-Channel 40-V (D-S) MOSFET PowerPAK SO-8L 650M SG 2 mil , 1.35 mΩ @ 10V mΩ @ 7.5V 1.75 mΩ @ 4.5V
Produkt ist nicht verfügbar
SIJ438ADP-T1-GE3 Hersteller : VISHAY sij438adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 169A
On-state resistance: 1.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 69.4W
Polarisation: unipolar
Gate charge: 162nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIJ438ADP-T1-GE3 Hersteller : VISHAY sij438adp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 169A; Idm: 300A
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 169A
On-state resistance: 1.75mΩ
Type of transistor: N-MOSFET
Power dissipation: 69.4W
Polarisation: unipolar
Gate charge: 162nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: 300A
Produkt ist nicht verfügbar