SIJ438DP-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4994 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 4994 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIJ438DP-T1-GE3
Description: MOSFET N-CH 40V 80A PPAK SO-8L, Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SIJ438, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 69.4W (Tc).
Preis SIJ438DP-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 80A PPAK SO-8L Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIJ438 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 69.4W (Tc) 
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auf Bestellung 8381 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 80A PPAK SO-8L Base Part Number: SIJ438 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 69.4W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active
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auf Bestellung 8309 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 80A PPAK SO-8L FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SIJ438 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 69.4W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide)
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auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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