SIJ438DP-T1-GE3

SIJ438DP-T1-GE3

SIJ438DP-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 40V Vds 20V Vgs PowerPAK SO-8L
sij438dp-1765054.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4994 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SIJ438DP-T1-GE3

Description: MOSFET N-CH 40V 80A PPAK SO-8L, Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SIJ438, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 69.4W (Tc).

Preis SIJ438DP-T1-GE3 ab 0 EUR bis 0 EUR

SIJ438DP-T1-GE3
SIJ438DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 80A PPAK SO-8L
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIJ438
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
sij438dp.pdf
auf Bestellung 8381 Stücke
Lieferzeit 21-28 Tag (e)
SIJ438DP-T1-GE3
SIJ438DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 80A PPAK SO-8L
Base Part Number: SIJ438
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
sij438dp.pdf
auf Bestellung 8309 Stücke
Lieferzeit 21-28 Tag (e)
SIJ438DP-T1-GE3
SIJ438DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 80A PPAK SO-8L
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIJ438
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
sij438dp.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)