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SIJ470DP-T1-GE3

SIJ470DP-T1-GE3 Vishay Siliconix


sij470dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 58.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.8A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
auf Bestellung 1025 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.72 EUR
10+ 3.04 EUR
100+ 2.36 EUR
500+ 2 EUR
1000+ 1.63 EUR
Mindestbestellmenge: 7
Produktrezensionen
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Technische Details SIJ470DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 100V 58.8A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58.8A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V.

Weitere Produktangebote SIJ470DP-T1-GE3 nach Preis ab 1.63 EUR bis 3.74 EUR

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Preis ohne MwSt
SIJ470DP-T1-GE3 SIJ470DP-T1-GE3 Hersteller : Vishay Semiconductors sij470dp.pdf MOSFET 100V 9.1mOhm@10V 58.8A N-CH
auf Bestellung 1633 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.74 EUR
17+ 3.09 EUR
100+ 2.41 EUR
500+ 2.04 EUR
1000+ 1.66 EUR
3000+ 1.63 EUR
Mindestbestellmenge: 14
SIJ470DP-T1-GE3 Hersteller : VISHAY sij470dp.pdf SIJ470DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIJ470DP-T1-GE3 SIJ470DP-T1-GE3 Hersteller : Vishay Siliconix sij470dp.pdf Description: MOSFET N-CH 100V 58.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.8A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Produkt ist nicht verfügbar