SIJ800DP-T1-GE3

SIJ800DP-T1-GE3

SIJ800DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20A PPAK SO-8
Power - Max: 35.7W
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)

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Technische Details SIJ800DP-T1-GE3

Description: MOSFET N-CH 40V 20A PPAK SO-8, Power - Max: 35.7W, Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 40V, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ).

Preis SIJ800DP-T1-GE3 ab 0 EUR bis 0 EUR