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SIJA54DP-T1-GE3

SIJA54DP-T1-GE3 Vishay Siliconix


sija54dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 15A, 10V
Power Dissipation (Max): 36.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 20 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.06 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SIJA54DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 2.35mOhm @ 15A, 10V, Power Dissipation (Max): 36.7W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 20 V.

Weitere Produktangebote SIJA54DP-T1-GE3 nach Preis ab 1.13 EUR bis 2.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIJA54DP-T1-GE3 SIJA54DP-T1-GE3 Hersteller : Vishay Semiconductors sija54dp.pdf MOSFET 40V Vds 20V Vgs PowerPAK SO-8L
auf Bestellung 6000 Stücke:
Lieferzeit 467-481 Tag (e)
Anzahl Preis ohne MwSt
21+2.56 EUR
25+ 2.11 EUR
100+ 1.64 EUR
500+ 1.61 EUR
9000+ 1.58 EUR
Mindestbestellmenge: 21
SIJA54DP-T1-GE3 SIJA54DP-T1-GE3 Hersteller : Vishay Siliconix sija54dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 15A, 10V
Power Dissipation (Max): 36.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 20 V
auf Bestellung 4900 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.57 EUR
13+ 2.1 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
SIJA54DP-T1-GE3 SIJA54DP-T1-GE3 Hersteller : Vishay sija54dp.pdf Trans MOSFET N-CH 40V 60A 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SIJA54DP-T1-GE3 SIJA54DP-T1-GE3 Hersteller : Vishay sija54dp.pdf Trans MOSFET N-CH 40V 60A 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SIJA54DP-T1-GE3 SIJA54DP-T1-GE3 Hersteller : Vishay sija54dp.pdf Trans MOSFET N-CH 40V 60A 5-Pin(4+Tab) PowerPAK SO T/R
Produkt ist nicht verfügbar
SIJA54DP-T1-GE3 Hersteller : VISHAY sija54dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36.7W
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIJA54DP-T1-GE3 Hersteller : VISHAY sija54dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36.7W
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar