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SIR106ADP-T1-RE3

SIR106ADP-T1-RE3 Vishay Siliconix

sir106adp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.64 EUR
6000+ 1.58 EUR
Mindestbestellmenge: 3000
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Technische Details SIR106ADP-T1-RE3 Vishay Siliconix

Description: MOSFET N-CH 100V 16.1A/65.8 PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 83.3W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V.

Weitere Produktangebote SIR106ADP-T1-RE3 nach Preis ab 1.68 EUR bis 3.64 EUR

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SIR106ADP-T1-RE3 SIR106ADP-T1-RE3 Hersteller : Vishay Siliconix sir106adp.pdf Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V
auf Bestellung 10533 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.61 EUR
10+ 3.02 EUR
100+ 2.4 EUR
500+ 2.03 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 8
SIR106ADP-T1-RE3 SIR106ADP-T1-RE3 Hersteller : Vishay Semiconductors sir106adp.pdf MOSFET N-CHANNEL 100V PowerPAK SO-8
auf Bestellung 46561 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.64 EUR
18+ 3.04 EUR
100+ 2.42 EUR
250+ 2.23 EUR
500+ 2.03 EUR
1000+ 1.74 EUR
3000+ 1.68 EUR
Mindestbestellmenge: 15
SIR106ADP-T1-RE3 Hersteller : VISHAY sir106adp.pdf SIR106ADP-T1-RE3 SMD N channel transistors
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