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SIR124DP-T1-RE3

SIR124DP-T1-RE3 Vishay Siliconix

sir124dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 16.1A/56.8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.02 EUR
6000+ 0.97 EUR
9000+ 0.92 EUR
Mindestbestellmenge: 3000
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Technische Details SIR124DP-T1-RE3 Vishay Siliconix

Description: MOSFET N-CH 80V 16.1A/56.8A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 40 V.

Weitere Produktangebote SIR124DP-T1-RE3 nach Preis ab 1.08 EUR bis 2.5 EUR

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SIR124DP-T1-RE3 SIR124DP-T1-RE3 Hersteller : Vishay Siliconix sir124dp.pdf Description: MOSFET N-CH 80V 16.1A/56.8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 56.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 40 V
auf Bestellung 12323 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.44 EUR
13+ 2.01 EUR
100+ 1.56 EUR
500+ 1.32 EUR
1000+ 1.08 EUR
Mindestbestellmenge: 11
SIR124DP-T1-RE3 SIR124DP-T1-RE3 Hersteller : Vishay Semiconductors sir124dp.pdf MOSFET 80V Vds; 20V Vgs PowerPAK SO-8
auf Bestellung 17558 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
21+2.5 EUR
24+ 2.25 EUR
100+ 1.75 EUR
500+ 1.45 EUR
1000+ 1.43 EUR
Mindestbestellmenge: 21
SIR124DP-T1-RE3 Hersteller : VISHAY sir124dp.pdf SIR124DP-T1-RE3 SMD N channel transistors
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