SIR158DP-T1-RE3

SIR158DP-T1-RE3

Hersteller: Vishay
N-Channel 30 V (D-S) MOSFET
sir158dp.pdf sir158dp.pdf
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Technische Details SIR158DP-T1-RE3

Description: MOSFET N-CH 30V 60A POWERPAKSO-8, Input Capacitance (Ciss) (Max) @ Vds: 4980pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V, Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 83W (Tc).

Preis SIR158DP-T1-RE3 ab 0 EUR bis 0 EUR

SIR158DP-T1-RE3
SIR158DP-T1-RE3
Hersteller: Vishay / Siliconix
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
sir158dp-1761553.pdf
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
SIR158DP-T1-RE3
SIR158DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
sir158dp.pdf
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
SIR158DP-T1-RE3
SIR158DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 4980pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
sir158dp.pdf
auf Bestellung 2854 Stücke
Lieferzeit 21-28 Tag (e)
SIR158DP-T1-RE3
SIR158DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
sir158dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen