SIR158DP-T1-RE3
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details SIR158DP-T1-RE3
Description: MOSFET N-CH 30V 60A POWERPAKSO-8, Input Capacitance (Ciss) (Max) @ Vds: 4980pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V, Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 83W (Tc).
Preis SIR158DP-T1-RE3 ab 0 EUR bis 0 EUR
SIR158DP-T1-RE3 Hersteller: Vishay / Siliconix MOSFET 30V Vds 20V Vgs PowerPAK SO-8 ![]() |
auf Bestellung 3000 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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SIR158DP-T1-RE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8 Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V ![]() |
auf Bestellung 1 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SIR158DP-T1-RE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 60A POWERPAKSO-8 Input Capacitance (Ciss) (Max) @ Vds: 4980pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 83W (Tc) ![]() |
auf Bestellung 2854 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SIR158DP-T1-RE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8 Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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