SIR165DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Power Dissipation (Max): 69.4W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.03 EUR |
6000+ | 0.98 EUR |
9000+ | 0.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR165DP-T1-GE3 Vishay Siliconix
Description: VISHAY - SIR165DP-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 60 A, 0.0038 ohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 60A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.3V, euEccn: NLR, Verlustleistung: 65.8W, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen III, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0038ohm, SVHC: To Be Advised.
Weitere Produktangebote SIR165DP-T1-GE3 nach Preis ab 1 EUR bis 4.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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SIR165DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V Power Dissipation (Max): 69.4W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V |
auf Bestellung 16619 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR165DP-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFETs -30V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 27953 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR165DP-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIR165DP-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 60 A, 0.0038 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.3V euEccn: NLR Verlustleistung: 65.8W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0038ohm SVHC: To Be Advised |
auf Bestellung 11167 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR165DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR165DP-T1-GE3 | Hersteller : Vishay Siliconix | P-канальний ПТ; Udss, В = 30; Id = 60 А; Ciss, пФ @ Uds, В = 4930 @ 15; Qg, нКл = 138 @ 10 В; Rds = 4,6 мОм; Ugs(th) = 2,3 В; Р, Вт = 69,4; Тексп, °C = -55...+150; Тип монт. = smd; PowerPAK® SO-8 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR165DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A Case: PowerPAK® SO8 Mounting: SMD On-state resistance: 7.5mΩ Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -30V Drain current: -60A Type of transistor: P-MOSFET Power dissipation: 65.8W Polarisation: unipolar Gate charge: 138nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -120A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIR165DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A Case: PowerPAK® SO8 Mounting: SMD On-state resistance: 7.5mΩ Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -30V Drain current: -60A Type of transistor: P-MOSFET Power dissipation: 65.8W Polarisation: unipolar Gate charge: 138nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -120A |
Produkt ist nicht verfügbar |