SIR166DP-T1-GE3

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Technische Details SIR166DP-T1-GE3
Description: MOSFET N-CH 30V 40A PPAK SO-8, Packaging: Cut Tape (CT), Manufacturer: Vishay Siliconix, Base Part Number: SIR166, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 48W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Discontinued at Digi-Key.
Preis SIR166DP-T1-GE3 ab 0 EUR bis 0 EUR
SIR166DP-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO EP T/R ![]() ![]() |
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SIR166DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8 Base Part Number: SIR166 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 48W (Tc) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIR166DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 48W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Discontinued at Digi-Key ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIR166DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8 Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIR166 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 48W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Discontinued at Digi-Key ![]() |
auf Bestellung 143 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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