SIR168DP-T1-GE3
verfügbar/auf Bestellung
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIR168DP-T1-GE3
Description: MOSFET N-CH 30V 40A PPAK SO-8, FET Type: MOSFET N-Channel, Metal Oxide, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 15V, Power - Max: 34.7W, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8.
Preis SIR168DP-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 15V Power - Max: 34.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 
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