SIR168DP-T1-GE3

SIR168DP-T1-GE3

SIR168DP-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 30V 40A 34.7W 4.4mohm @ 10V
65039-65748.pdf
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Lieferzeit 14-28 Tag (e)

Technische Details SIR168DP-T1-GE3

Description: MOSFET N-CH 30V 40A PPAK SO-8, FET Type: MOSFET N-Channel, Metal Oxide, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 15V, Power - Max: 34.7W, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8.

Preis SIR168DP-T1-GE3 ab 0 EUR bis 0 EUR

SIR168DP-T1-GE3
SIR168DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 15V
Power - Max: 34.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
65039.pdf
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