SIR172ADP-T1-GE3 Vishay Semiconductors
auf Bestellung 443 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.22 EUR |
| 50+ | 1.05 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.48 EUR |
| 3000+ | 0.43 EUR |
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Technische Details SIR172ADP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 24A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Power Dissipation (Max): 29.8W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V.
Weitere Produktangebote SIR172ADP-T1-GE3 nach Preis ab 0.5 EUR bis 1.27 EUR
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SIR172ADP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 24A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V |
auf Bestellung 1961 Stücke: Lieferzeit 21-28 Tag (e) |
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| SIR172ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A Drain-source voltage: 30V Drain current: 24A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 29.8W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 44nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 3000 Stücke |
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SIR172ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 24A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 29.8W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SIR172ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 60A Drain-source voltage: 30V Drain current: 24A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 29.8W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 44nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |