SIR186DP-T1-RE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 14032 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 14032 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIR186DP-T1-RE3
Description: MOSFET N-CH 60V 60A POWERPAKSO-8, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SIR186, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 57W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V, Vgs(th) (Max) @ Id: 3.6V @ 250µA, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc).
Preis SIR186DP-T1-RE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 60A PPAK SO-8 Base Part Number: SIR186 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 57W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix 
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auf Bestellung 5839 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 60A POWERPAKSO-8 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIR186 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 57W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
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auf Bestellung 6156 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 60A PPAK SO-8 Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SIR186 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 57W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
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auf Bestellung 5839 Stücke Lieferzeit 21-28 Tag (e) |
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