SIR401DP-T1-GE3

SIR401DP-T1-GE3

SIR401DP-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET -20V Vds 12V Vgs PowerPAK SO-8
sir401dp-65632.pdf
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Technische Details SIR401DP-T1-GE3

Description: MOSFET P-CH 20V 50A PPAK SO-8, FET Type: MOSFET P-Channel, Metal Oxide, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 9080pF @ 10V, Power - Max: 39W, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8.

Preis SIR401DP-T1-GE3 ab 0 EUR bis 0 EUR

SIR401DP-T1-GE3
SIR401DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 50A PPAK SO-8
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9080pF @ 10V
Power - Max: 39W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
sir401dp.pdf
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