SIR403EDP-T1-GE3
verfügbar/auf Bestellung
auf Bestellung 3051 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 3051 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIR403EDP-T1-GE3
Description: MOSFET P-CH 30V 40A PPAK 8SO, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 56.8W, Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET P-Channel, Metal Oxide.
Preis SIR403EDP-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V 40A PPAK 8SO Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 56.8W Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide 
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