SIR403EDP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.86 EUR |
| 6000+ | 0.82 EUR |
| 9000+ | 0.78 EUR |
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Technische Details SIR403EDP-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 40A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V, Power Dissipation (Max): 5W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V.
Weitere Produktangebote SIR403EDP-T1-GE3 nach Preis ab 0.9 EUR bis 2.1 EUR
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SIR403EDP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 40A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V |
auf Bestellung 13199 Stücke: Lieferzeit 21-28 Tag (e) |
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SIR403EDP-T1-GE3 | Hersteller : Vishay Semiconductors |
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| SIR403EDP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A Kind of package: reel; tape Drain-source voltage: -30V Drain current: -40A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 56.8W Polarisation: unipolar Gate charge: 153nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -60A Mounting: SMD Case: PowerPAK® SO8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR403EDP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -40A; Idm: -60A Kind of package: reel; tape Drain-source voltage: -30V Drain current: -40A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 56.8W Polarisation: unipolar Gate charge: 153nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -60A Mounting: SMD Case: PowerPAK® SO8 |
Produkt ist nicht verfügbar |