SIR403EDP-T1-GE3

SIR403EDP-T1-GE3

SIR403EDP-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET -30V Vds 25V Vgs PowerPAK SO-8
sir403edp-806010.pdf
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Technische Details SIR403EDP-T1-GE3

Description: MOSFET P-CH 30V 40A PPAK 8SO, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 56.8W, Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET P-Channel, Metal Oxide.

Preis SIR403EDP-T1-GE3 ab 0 EUR bis 0 EUR

SIR403EDP-T1-GE3
SIR403EDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 40A PPAK 8SO
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 56.8W
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
sir403edp.pdf
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