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SIR403EDP-T1-GE3

SIR403EDP-T1-GE3 Vishay Siliconix

sir403edp.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.55 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIR403EDP-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 40A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V, Power Dissipation (Max): 5W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V.

Weitere Produktangebote SIR403EDP-T1-GE3 nach Preis ab 0.56 EUR bis 2.38 EUR

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Preis
SIR403EDP-T1-GE3 SIR403EDP-T1-GE3 Hersteller : Vishay Semiconductors sir403edp.pdf MOSFETs -30V Vds 25V Vgs PowerPAK SO-8
auf Bestellung 118140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.71 EUR
10+1.15 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.6 EUR
3000+0.59 EUR
6000+0.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIR403EDP-T1-GE3 SIR403EDP-T1-GE3 Hersteller : Vishay Siliconix sir403edp.pdf Description: MOSFET P-CH 30V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V
auf Bestellung 12434 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
12+1.51 EUR
100+1 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIR403EDP-T1-GE3 SIR403EDP-T1-GE3 Hersteller : Vishay sir403edp.pdf Trans MOSFET P-CH 30V 40A 8-Pin PowerPAK SO EP T/R
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SIR403EDP-T1-GE3 Hersteller : VISHAY sir403edp.pdf SIR403EDP-T1-GE3 SMD P channel transistors
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Im Einkaufswagen  Stück im Wert von  UAH