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SIR418DP-T1-GE3

SIR418DP-T1-GE3 Vishay Siliconix


sir418dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 21000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.29 EUR
6000+ 1.23 EUR
9000+ 1.17 EUR
Mindestbestellmenge: 3000
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Technische Details SIR418DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 40A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V.

Weitere Produktangebote SIR418DP-T1-GE3 nach Preis ab 1.34 EUR bis 3.15 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIR418DP-T1-GE3 SIR418DP-T1-GE3 Hersteller : Vishay Siliconix sir418dp.pdf Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 22610 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.12 EUR
11+ 2.55 EUR
100+ 1.99 EUR
500+ 1.68 EUR
1000+ 1.37 EUR
Mindestbestellmenge: 9
SIR418DP-T1-GE3 SIR418DP-T1-GE3 Hersteller : Vishay Semiconductors sir418dp.pdf MOSFET 40V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 5935 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
17+3.15 EUR
21+ 2.59 EUR
100+ 2 EUR
500+ 1.7 EUR
1000+ 1.38 EUR
3000+ 1.34 EUR
Mindestbestellmenge: 17
SIR418DP-T1-GE3 SIR418DP-T1-GE3 Hersteller : Vishay sir418dp.pdf Trans MOSFET N-CH 40V 40A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar
SIR418DP-T1-GE3 SIR418DP-T1-GE3 Hersteller : Vishay sir418dp.pdf Trans MOSFET N-CH 40V 40A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar
SIR418DP-T1-GE3 Hersteller : VISHAY sir418dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A; 39W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIR418DP-T1-GE3 Hersteller : VISHAY sir418dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 40A; Idm: 70A; 39W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 70A
Power dissipation: 39W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar