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SIR4602LDP-T1-RE3

SIR4602LDP-T1-RE3 Vishay Siliconix

sir4602ldp.pdf Hersteller: Vishay Siliconix
Description: POWERPAK SO-8, 8.8 M @ 10V, 12.5
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1185 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.91 EUR
Mindestbestellmenge: 3000
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Technische Details SIR4602LDP-T1-RE3 Vishay Siliconix

Description: POWERPAK SO-8, 8.8 M @ 10V, 12.5, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 52.1A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1185 pF @ 30 V.

Weitere Produktangebote SIR4602LDP-T1-RE3 nach Preis ab 0.97 EUR bis 2.23 EUR

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SIR4602LDP-T1-RE3 SIR4602LDP-T1-RE3 Hersteller : Vishay Siliconix sir4602ldp.pdf Description: POWERPAK SO-8, 8.8 M @ 10V, 12.5
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1185 pF @ 30 V
auf Bestellung 5909 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.21 EUR
15+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
SIR4602LDP-T1-RE3 SIR4602LDP-T1-RE3 Hersteller : Vishay Semiconductors sir4602ldp.pdf MOSFET N-CH 60-V MSFT
auf Bestellung 14200 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.23 EUR
29+ 1.81 EUR
100+ 1.41 EUR
500+ 1.31 EUR
3000+ 1.11 EUR
Mindestbestellmenge: 24
SIR4602LDP-T1-RE3 Hersteller : VISHAY sir4602ldp.pdf SIR4602LDP-T1-RE3 SMD N channel transistors
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