SIR608DP-T1-RE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 811 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 811 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIR608DP-T1-RE3
Description: MOSFET N-CH 45V 51A/208A PPAK, Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc), Drain to Source Voltage (Vdss): 45V, Base Part Number: SIR608, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix.
Preis SIR608DP-T1-RE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 45V 51A/208A PPAK Drain to Source Voltage (Vdss): 45V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIR608 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) 
|
auf Bestellung 5679 Stücke Lieferzeit 21-28 Tag (e) |
|
|
|
Hersteller: Vishay Siliconix Description: MOSFET N-CH 45V 51A/208A PPAK Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) Drain to Source Voltage (Vdss): 45V Base Part Number: SIR608 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix
|
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
|
|