SIR608DP-T1-RE3

SIR608DP-T1-RE3

SIR608DP-T1-RE3

Hersteller: Vishay Semiconductors
MOSFET 45V Vds; 20/-16V Vgs PowerPAK SO-8
VISH_S_A0011029452_1-2571538.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 811 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SIR608DP-T1-RE3

Description: MOSFET N-CH 45V 51A/208A PPAK, Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc), Drain to Source Voltage (Vdss): 45V, Base Part Number: SIR608, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix.

Preis SIR608DP-T1-RE3 ab 0 EUR bis 0 EUR

SIR608DP-T1-RE3
SIR608DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45V 51A/208A PPAK
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR608
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
sir608dp.pdf
auf Bestellung 5679 Stücke
Lieferzeit 21-28 Tag (e)
SIR608DP-T1-RE3
SIR608DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45V 51A/208A PPAK
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
Drain to Source Voltage (Vdss): 45V
Base Part Number: SIR608
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
sir608dp.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)