SIR608DP-T1-RE3 Vishay Semiconductors
auf Bestellung 3337 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.43 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.25 EUR |
| 3000+ | 1.08 EUR |
| 6000+ | 1.04 EUR |
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Technische Details SIR608DP-T1-RE3 Vishay Semiconductors
Description: MOSFET N-CH 45V 51A/208A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V.
Weitere Produktangebote SIR608DP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIR608DP-T1-RE3 | Hersteller : Vishay |
 N-Channel 45 V (D-S) Mosfet |
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SIR608DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 45V 51A/208A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V |
Produkt ist nicht verfügbar |
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SIR608DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 45V 51A/208A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V |
Produkt ist nicht verfügbar |