auf Bestellung 5800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 71+ | 2.25 EUR |
| 82+ | 1.86 EUR |
| 83+ | 1.77 EUR |
| 84+ | 1.69 EUR |
| 101+ | 1.35 EUR |
| 250+ | 1.28 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 0.99 EUR |
| 3000+ | 0.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR626LDP-T1-RE3 Vishay
Description: MOSFET N-CH 60V 45.6A/186A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V.
Weitere Produktangebote SIR626LDP-T1-RE3 nach Preis ab 0.97 EUR bis 4.19 EUR
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SIR626LDP-T1-RE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 45.6A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 5800 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR626LDP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 45.6A/186A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V |
auf Bestellung 3197 Stücke: Lieferzeit 21-28 Tag (e) |
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SIR626LDP-T1-RE3 | Hersteller : Vishay / Siliconix |
MOSFET 60V Vds; 20V Vgs PowerPAK SO-8 |
auf Bestellung 10817 Stücke: Lieferzeit 14-28 Tag (e) |
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SIR626LDP-T1-RE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 45.6A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIR626LDP-T1-RE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 45.6A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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| SIR626LDP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 186A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIR626LDP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 45.6A/186A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V |
Produkt ist nicht verfügbar |
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| SIR626LDP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 186A Pulsed drain current: 400A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |