SIR640ADP-T1-GE3 Vishay Semiconductors

Description: MOSFET N-CH 40V 41.6A/100A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V.