SIR642DP-T1-GE3

SIR642DP-T1-GE3

SIR642DP-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 40V 60A 83W 2.4mohms @ 10V
sir642dp-1145248.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SIR642DP-T1-GE3

Description: MOSFET N-CH 40V 60A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V, Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drain to Source Voltage (Vdss): 40V, FET Feature: Logic Level Gate, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Power - Max: 83W.

Preis SIR642DP-T1-GE3 ab 0 EUR bis 0 EUR

SIR642DP-T1-GE3
SIR642DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power - Max: 83W
sir642dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR642DP-T1-GE3
SIR642DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power - Max: 83W
sir642dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR642DP-T1-GE3
SIR642DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power - Max: 83W
sir642dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen