SIR642DP-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIR642DP-T1-GE3
Description: MOSFET N-CH 40V 60A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V, Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drain to Source Voltage (Vdss): 40V, FET Feature: Logic Level Gate, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Power - Max: 83W.
Preis SIR642DP-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 40V FET Feature: Logic Level Gate FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Power - Max: 83W 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 40V FET Feature: Logic Level Gate FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Power - Max: 83W
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 40V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4155pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 40V FET Feature: Logic Level Gate FET Type: MOSFET N-Channel, Metal Oxide Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Power - Max: 83W
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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