SIR664DP-T1-GE3 Vishay Semiconductors
auf Bestellung 6976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.08 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.78 EUR |
| 3000+ | 0.74 EUR |
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Technische Details SIR664DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 60V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 30 V.
Weitere Produktangebote SIR664DP-T1-GE3 nach Preis ab 0.76 EUR bis 2.5 EUR
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SIR664DP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 60A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 30 V |
auf Bestellung 2813 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR664DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIR664DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIR664DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 30 V |
Produkt ist nicht verfügbar |