SIR670DP-T1-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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Technische Details SIR670DP-T1-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 60A, Pulsed drain current: 200A, Power dissipation: 56.8W, Case: PowerPAK® SO8, Gate-source voltage: ±20V, On-state resistance: 7.8mΩ, Mounting: SMD, Gate charge: 63nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SIR670DP-T1-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SIR670DP-T1-GE3 | Hersteller : Vishay Siliconix | Description: MOSFET N-CH 60V 60A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SIR670DP-T1-GE3 | Hersteller : Vishay Siliconix | Description: MOSFET N-CH 60V 60A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SIR670DP-T1-GE3 | Hersteller : Vishay Siliconix | Description: MOSFET N-CH 60V 60A PPAK SO-8 |
Produkt ist nicht verfügbar |
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SIR670DP-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 |
Produkt ist nicht verfügbar |
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SIR670DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 200A Power dissipation: 56.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |