Produkte > VISHAY SILICONIX > SiR690DP-T1-GE3
SiR690DP-T1-GE3

SiR690DP-T1-GE3 Vishay Siliconix

sir690dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.71 EUR
6000+ 1.64 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SiR690DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 200V 34.4A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V.

Weitere Produktangebote SiR690DP-T1-GE3 nach Preis ab 1.8 EUR bis 3.85 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SiR690DP-T1-GE3 SiR690DP-T1-GE3 Hersteller : Vishay Siliconix sir690dp.pdf Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
auf Bestellung 8382 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.8 EUR
10+ 3.14 EUR
100+ 2.5 EUR
500+ 2.12 EUR
1000+ 1.8 EUR
Mindestbestellmenge: 7
SiR690DP-T1-GE3 SiR690DP-T1-GE3 Hersteller : Vishay / Siliconix sir690dp.pdf MOSFET 200V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 8884 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.85 EUR
17+ 3.2 EUR
100+ 2.54 EUR
250+ 2.36 EUR
500+ 2.14 EUR
1000+ 1.86 EUR
Mindestbestellmenge: 14
SiR690DP-T1-GE3 Hersteller : VISHAY sir690dp.pdf SIR690DP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIR690DP-T1-GE3 SIR690DP-T1-GE3 Hersteller : Vishay sir690dp.pdf Trans MOSFET N-CH 200V 34.4A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar