SIR770DP-T1-GE3 Vishay / Siliconix

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V; 8A, Type of transistor: N-MOSFET x2 + Schottky, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 8A, Pulsed drain current: 35A, Power dissipation: 17.8W, Case: PowerPAK® SO8, Gate-source voltage: ±20V, On-state resistance: 25mΩ, Mounting: SMD, Gate charge: 21nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 3000 Stücke.