SIR800ADP-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6000 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 6000 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SIR800ADP-T1-GE3
Description: MOSFET N-CH 20V 50.2A/177A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): +12V, -8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Preis SIR800ADP-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 50.2A/177A PPAK Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V 
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 20V 50.2A/177A PPAK Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +12V, -8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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