SIR800ADP-T1-GE3

SIR800ADP-T1-GE3

SIR800ADP-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 20V Vds 12V Vgs PowerPAK SO-8
VISH_S_A0011029459_1-2571715.pdf
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Technische Details SIR800ADP-T1-GE3

Description: MOSFET N-CH 20V 50.2A/177A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): +12V, -8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).

Preis SIR800ADP-T1-GE3 ab 0 EUR bis 0 EUR

SIR800ADP-T1-GE3
SIR800ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50.2A/177A PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
sir800adp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR800ADP-T1-GE3
SIR800ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50.2A/177A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
sir800adp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen