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SIR846BDP-T1-RE3

SIR846BDP-T1-RE3 Vishay Siliconix

sir846bdp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.1 EUR
Mindestbestellmenge: 3000
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Technische Details SIR846BDP-T1-RE3 Vishay Siliconix

Description: MOSFET N-CH 100V 16.1A/65.8 PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 83.3W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V.

Weitere Produktangebote SIR846BDP-T1-RE3 nach Preis ab 1.46 EUR bis 3.85 EUR

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SIR846BDP-T1-RE3 SIR846BDP-T1-RE3 Hersteller : Vishay Siliconix sir846bdp.pdf Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V
auf Bestellung 8711 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.64 EUR
100+ 2.11 EUR
500+ 1.79 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 7
SIR846BDP-T1-RE3 SIR846BDP-T1-RE3 Hersteller : Vishay Semiconductors sir846bdp.pdf MOSFET N-CHANNEL 100-V(D-S) PowerPAK SO-8
auf Bestellung 15544 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.85 EUR
17+ 3.17 EUR
100+ 2.47 EUR
500+ 2.08 EUR
1000+ 1.7 EUR
3000+ 1.62 EUR
Mindestbestellmenge: 14
SIR846BDP-T1-RE3 Hersteller : VISHAY sir846bdp.pdf SIR846BDP-T1-RE3 SMD N channel transistors
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