SIR850DP-T1-GE3

SIR850DP-T1-GE3

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sir850dp.pdf
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Technische Details SIR850DP-T1-GE3

Description: MOSFET N-CH 25V 30A PPAK SO-8, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 25V, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 41.7W, Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V.

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SIR850DP-T1-GE3
Hersteller: VISHAY
07NOPB
sir850dp.pdf
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SIR850DP-T1-GE3
SIR850DP-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 25V 30A 41.7W 7.0mohm @ 10V
sir850dp-247450.pdf
auf Bestellung 4150 Stücke
Lieferzeit 14-28 Tag (e)
SIR850DP-T1-GE3
SIR850DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 30A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 41.7W
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V
sir850dp.pdf
auf Bestellung 2352 Stücke
Lieferzeit 21-28 Tag (e)
SIR850DP-T1-GE3
SIR850DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 30A PPAK SO-8
Power - Max: 41.7W
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
sir850dp.pdf
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SIR850DP-T1-GE3
SIR850DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 25V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 41.7W
sir850dp.pdf
auf Bestellung 2352 Stücke
Lieferzeit 21-28 Tag (e)