SIR864DP-T1-GE3

SIR864DP-T1-GE3

SIR864DP-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 30V 40A N-CH MOSFET
sir864dp-247467.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 451 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SIR864DP-T1-GE3

Description: MOSFET N-CH 30V 40A PPAK 8SO, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 54W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), Part Status: Obsolete, Packaging: Tape & Reel (TR).

Preis SIR864DP-T1-GE3 ab 0 EUR bis 0 EUR

SIR864DP-T1-GE3
SIR864DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK 8SO
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
sir864dp.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)