SIR870ADP-T1-RE3 Vishay / Siliconix
auf Bestellung 5259 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details SIR870ADP-T1-RE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A, Drain-source voltage: 100V, Drain current: 60A, On-state resistance: 10.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 104W, Polarisation: unipolar, Kind of package: reel; tape, Case: PowerPAK® SO8, Gate charge: 80nC, Mounting: SMD, Technology: TrenchFET®, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 300A, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SIR870ADP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SIR870ADP-T1-RE3 | Hersteller : Vishay Siliconix | Description: MOSFET N-CH 100V 60A POWERPAKSO |
auf Bestellung 5140 Stücke: Lieferzeit 21-28 Tag (e) |
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| SIR870ADP-T1-RE3 | Hersteller : Vishay Siliconix | Description: MOSFET N-CH 100V 60A POWERPAKSO |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SIR870ADP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A Drain-source voltage: 100V Drain current: 60A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 80nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
| SIR870ADP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A Drain-source voltage: 100V Drain current: 60A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® SO8 Gate charge: 80nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A |
Produkt ist nicht verfügbar |