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SIR870BDP-T1-RE3

SIR870BDP-T1-RE3 Vishay Siliconix


sir870bdp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.27 EUR
Mindestbestellmenge: 3000
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Technische Details SIR870BDP-T1-RE3 Vishay Siliconix

Description: MOSFET N-CH 100V 18.8A/81A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V, Power Dissipation (Max): 5.4W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V.

Weitere Produktangebote SIR870BDP-T1-RE3 nach Preis ab 2.39 EUR bis 5.12 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIR870BDP-T1-RE3 SIR870BDP-T1-RE3 Hersteller : Vishay Siliconix sir870bdp.pdf Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
auf Bestellung 5415 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.04 EUR
10+ 4.18 EUR
100+ 3.33 EUR
500+ 2.81 EUR
1000+ 2.39 EUR
Mindestbestellmenge: 6
SIR870BDP-T1-RE3 SIR870BDP-T1-RE3 Hersteller : Vishay Semiconductors sir870bdp.pdf MOSFET N-CHANNEL 100 V
auf Bestellung 157 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+5.12 EUR
13+ 4.26 EUR
100+ 3.43 EUR
250+ 3.3 EUR
500+ 2.91 EUR
1000+ 2.47 EUR
3000+ 2.44 EUR
Mindestbestellmenge: 11
SIR870BDP-T1-RE3 Hersteller : VISHAY sir870bdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIR870BDP-T1-RE3 Hersteller : VISHAY sir870bdp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar