SIR872ADP-T1-GE3

SIR872ADP-T1-GE3

Hersteller: VISHAY
Material: SIR872ADP-T1-GE3 SMD N channel transistors
sir872adp.pdf
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Technische Details SIR872ADP-T1-GE3

Description: MOSFET N-CH 150V 53.7A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 75V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc), Drain to Source Voltage (Vdss): 150V, Base Part Number: SIR872, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 6.25W (Ta), 104W (Tc).

Preis SIR872ADP-T1-GE3 ab 0 EUR bis 0 EUR

SIR872ADP-T1-GE3
Hersteller: VISHAY
Material: SIR872ADP-T1-GE3 SMD N channel transistors
sir872adp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR872ADP-T1-GE3
SIR872ADP-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3
sir872adp-1764514.pdf
auf Bestellung 2821 Stücke
Lieferzeit 14-28 Tag (e)
SIR872ADP-T1-GE3
SIR872ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Drain to Source Voltage (Vdss): 150V
Base Part Number: SIR872
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
sir872adp.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIR872ADP-T1-GE3
SIR872ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Base Part Number: SIR872
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
sir872adp.pdf
auf Bestellung 4248 Stücke
Lieferzeit 21-28 Tag (e)